This work presents a study of p-type passivating contacts based on SiC_x formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the two interfaces (wafer/contact and contact/metal) to the contact resistivity are first decorrelated, identifying tunnelling at the wafer interface as the main contribution. We then investigate the influence of the active dopant concentration on the contact resistivity and the SiC_x sheet resistance and propose strategies to reduce both resistances by increasing the thermal budget applied during RTP. Lastly, we discuss potentials and limitations of implementing the investigated stacks as rear side contacts of p-type devices with localized metallization. We demonstrate that increasing the thermal budget during RTP can effectively mitigate resistive losses and enhance contact performance and we show that an oxide layer that can withstand high thermal budgets is the key factor for obtaining simultaneously high passivation quality and good electrical properties. We investigate three different oxide types grown by HNO₃ immersion, UV-O₃ exposure and N₂O plasma oxidation. The latter is demonstrated to be a promising candidate for an application in devices fabricated with high RTP thermal budget.