Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art

Sub-10 nm resolution electron beam lithography in ultrathin HSQ resist layers

Resist thickness effects on ultra thin HSQ patterning capabilities

High-dose exposure of silicon in electron beam lithography

Towards 2-10 nm electron-beam lithography: a quantitative approach

10 nm lines and spaces written in HSQ using electron beam lithography

Limiting Factors for electron beam lithography when using ultra-thin HSQ layers

Sub- 10-nm structures written in ultra-thin HSQ resist layers, using Electron Beam Lithography

Influence of the development process on ultimate resolution electron beam lithography using ultrathin hydrogen silsesquioxane resist layers