Sub-10 nm resolution electron beam lithography in ultrathin HSQ resist layers

Resist thickness effects on ultra thin HSQ patterning capabilities

Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art

Towards 2-10 nm electron-beam lithography: a quantitative approach

High-dose exposure of silicon in electron beam lithography

Sub- 10-nm structures written in ultra-thin HSQ resist layers, using Electron Beam Lithography

Limiting Factors for electron beam lithography when using ultra-thin HSQ layers

10 nm lines and spaces written in HSQ using electron beam lithography

Influence of the development process on ultimate resolution electron beam lithography using ultrathin hydrogen silsesquioxane resist layers