Mv
MCM van de Sanden
Authored
20 records found
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ~ 200¿°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate
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We have applied both sinusoidal and pulse-shaped rf substrate biasing techniques to the expanding thermal plasma deposition of hydrogenated amorphous silicon. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy data demonstrate that both methods of substrate bi
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Abstract
The surface roughness evolution of hydrogenated amorphous silicon (a-Si:H) films has been studied using in situ spectroscopic ellipsometry for a temperature range of 150¿400¿°C. The effect of external rf substrate biasing on the coalescence phase is discussed and a remov
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We applied pulse-shaped biasing (PSB) to the expanding thermal plasma deposition of intrinsic hydrogenated amorphous silicon layers at substrate temperatures of 200¿°C and growth rates of about 1¿nm/s. Fourier transform infrared spectroscopy of intrinsic films showed a densificat
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Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AFM) measurements. With RTSE a m
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In this paper, a hybrid system consisting of metal nano-particles dispersed on the surface of a dielectric layer is presented: a remote Expanding Thermal Plasma CVD system is used for the deposition of the inorganic (i.e. SiO2) layers from hexamethyldisiloxane/oxygen mixtures in
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Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmissi
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We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion fl
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In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstruct
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In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the opti
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In this work, the expanding thermal plasma chemical vapor deposition in combination with radio frequency magnetron sputtering is used to deposit dielectric/metal multi-layers with controlled size and density of nanoparticles. The multi-layer structure serves the purpose of increa
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