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FinFET Considerations for 0.18 um Technology

Conference paper - V. Jovanovic, M Poljak, T Suligoj

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

Conference paper - M Poljak, V. Jovanovic, T Suligoj

Al mediated solid phase epitaxy of silicon on insulator

Conference paper - A. Sakic, Y Civale, L.K. Nanver, C Biasotto, V. Jovanovic

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Conference paper - V. Jovanovic, C Biasotto, G Mussler, J Stangl, G Bauer, J. van der Cingel, E Bonera, L.K. Nanver, J Moers, D Grutzmacher, J. Zhang, OG Schmidt, L Miglio, H Kosina, A Marzegalli, G Vastola

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Conference paper - M Poljak, V. Jovanovic, T Suligoj

Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

Conference paper - C Biasotto, V Gonda, L.K. Nanver, J. van der Cingel, V. Jovanovic

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Journal article - V. Jovanovic, C Biasotto, OG Schmidt, L Miglio, L.K. Nanver, J Moers, D Gruetzmacher, J Gerharz, G Mussler, J. van der Cingel, J. Zhang, G Bauer

Improving bulk FinFET DC performance in comparison to SOI FinFET

Journal article - M Poljak, V. Jovanovic, T Suligoj

Application of Laser Annealing in the EU FP6 Project D-DotFET

Conference paper - L.K. Nanver, V. Jovanovic, C Biasotto, J. van der Cingel

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Conference paper - M Poljak, V. Jovanovic, T Suligoj

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Conference paper - V. Jovanovic, M Poljak, T Suligoj, Y Civale, L.K. Nanver

Vertical silicon-on-nothing FET: subthreshold slope calculation using compact capacitance model

Journal article - B Svilicic, V. Jovanovic, T Suligoj

Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET

Conference paper - B Svilicic, V. Jovanovic, T Suligoj

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

Conference paper - A. Sakic, V. Jovanovic, P Maleki, T.L.M. Scholtes, S. Milosavljevic, L.K. Nanver

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Conference paper - M Poljak, V. Jovanovic, T Suligoj

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Conference paper - M Poljak, V. Jovanovic, T Suligoj

Vertical silicon-on-nothing FET: threshold voltage calculation using compact capacitance model

Journal article - B Svilicic, V. Jovanovic, T Suligoj

Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

Conference paper - C Biasotto, V. Jovanovic, L.K. Nanver, J. van der Cingel

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Conference paper - M Poljak, V. Jovanovic, T Suligoj

Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET

Conference paper - C Biasotto, V. Jovanovic, V Gonda, J. van der Cingel, S. Milosavljevic, L.K. Nanver

V. Jovanovic

Authored

FinFET Considerations for 0.18 um Technology

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

Al mediated solid phase epitaxy of silicon on insulator

N-channel MOSFETS fabricated on self assembled SiGe dots for strain-enhanced moblity

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

n-Channel MOSFETs fabricated on SiGe dots for strain-enhanced mobility

Improving bulk FinFET DC performance in comparison to SOI FinFET

Application of Laser Annealing in the EU FP6 Project D-DotFET

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Vertical silicon-on-nothing FET: subthreshold slope calculation using compact capacitance model

Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Vertical silicon-on-nothing FET: threshold voltage calculation using compact capacitance model

Downscaling of Al/Si-gate MOSFETs with Self-Aligned Laser Annealed Source/Drain Junctions

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Integration of Laser-Annealed Junctions in a Low-Temperature High-k Metal-Gate MISFET