-
document
-
Li, J. (author), Vollebregt, S. (author), Zhang, Y. (author), Shekhar, A. (author), May, Alexander (author), van Driel, W.D. (author), Zhang, Kouchi (author)
Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...
conference paper 2024
Source URL (retrieved on 2024-06-18 07:59): https://repository.tudelft.nl/islandora/search/%20?amp%3Bamp%3Bdisplay=tud_default&%3Bamp%3Bf%5B0%5D=mods_name_personal_author_namePart_family_ss%3A%22Van%5C%20Oosterom%22&%3Bamp%3Bf%5B1%5D=mods_name_personal_author_namePart_family_ss%3A%22Zevenbergen%22&%3Bamp%3Bf%5B2%5D=mods_subject_topic_ss%3A%22domain%5C%20models%22&collection=research&f%5B0%5D=mods_name_personal_author_namePart_family_ss%3A%22Zhang%22&f%5B1%5D=mods_subject_topic_ss%3A%22Silicon%5C%20carbide%22&f%5B2%5D=mods_subject_topic_ss%3A%22Electron%5C%20traps%22