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document
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Stecca, M. (author), Tan, Changyu (author), Xu, J. (author), Soeiro, Thiago B. (author), Bauer, P. (author), Palensky, P. (author)
In this article, a hybrid Si/Si carbide (SiC) switch (HyS) modulation with minimum SiC MOSFET conduction (mcHyS) is experimentally characterized, so as to derive its conduction and switching performance. These are later used to derive a silicon (Si) area analytical model for the HyS configuration. The chip area model is used to benchmark the...
journal article 2022
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document
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Tan, Changyu (author), Stecca, M. (author), Soeiro, Thiago B. (author), Dong, J. (author), Bauer, P. (author)
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to...
conference paper 2021
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