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document
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Tan, Changyu (author), Stecca, M. (author), Soeiro, Thiago B. (author), Dong, J. (author), Bauer, P. (author)
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to...
conference paper 2021
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