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Hong, H. (author), Lei, Xin (author), Wei, Jiangtao (author), Zhang, Yang (author), Zhang, Yulong (author), Sun, Jianwen (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author), Liu, Zewen (author)
Ionic FETs have enormous potential for energy conversion, sensing, and ionic circuits due to their efficient regulation of the nanochannel. Here ionic FETs based on single-crystal silicon nanopores and the rectification of the fabricated devices are studied. The electrical characterization results demonstrated that since the silicon-based...
journal article 2024
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Zhan, Teng (author), Sun, Jianwen (author), Feng, Tao (author), Zhang, Yulong (author), Zhou, Binru (author), Zhang, Banghong (author), Wang, Junxi (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The authors regret an error in the abstract of the published article: the text ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0–1 V) before the current is fully turned on.’’ should be changed to ‘‘(i) the Schottky emission mechanism at a low reverse voltage (0 to 1 V) before the current is fully turned on.’’ This change does...
journal article 2023
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Zhan, Teng (author), Sun, J. (author), Feng, Tao (author), Zhang, Yulong (author), Zhou, Binru (author), Zhang, Banghong (author), Wang, Junxi (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
Recent research focusing on wide-bandgap and two-dimensional materials with a Schottky junction has provided a new concept for ultraviolet photodetectors. However, the working mechanism of the Schottky junction-based detector varies depending on the photosensitive materials used and the device structure. We demonstrated a TiO<sub>2</sub>...
journal article 2022
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Sun, J. (author), Zhan, Teng (author), Sokolovskij, R. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....
journal article 2021
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Sun, J. (author), Zhang, Shuo (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Li, Jinmin (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO<sub>3</sub>) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO<sub>3</sub>nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...
journal article 2020
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Sun, J. (author), Hu, D. (author), Liu, Zewen (author), Middelburg, L.M. (author), Vollebregt, S. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures was demonstrated. To validate the proposed concept of the AlGaN/GaN vacuum sensor, a 700 µm diameter circular membrane was electrically characterized under applied...
journal article 2020
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Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO<sub>3</sub>) nano-film modified gate for nitrogen dioxide (NO<sub>2</sub>) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...
journal article 2019
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Sun, J. (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...
journal article 2019
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Sun, J. (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A suspended WO<sub>3</sub>-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm...
journal article 2019
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Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Santagata, F. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working...
journal article 2019
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Santagata, F. (author), Sun, J. (author), Iervolino, E. (author), Yu, H. (author), Wang, F. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author), Zhang, Guoyi (author)
Purpose: The purpose of this paper is to demonstrate a novel 3D system-in-package (SiP) approach. This new packaging approach is based on stacked silicon submount technology. As demonstrators, a smart lighting module and a sensor systems were successfully developed by using the fabrication and assembly process described in this paper. Design...
journal article 2018
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Sokolovskij, R. (author), Sun, J. (author), Santagata, F. (author), Iervolino, E. (author), Li, S. (author), Zhang, G.Y. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O<sub>2</sub> plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...
journal article 2016
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