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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...
journal article 2020
Source URL (retrieved on 2024-05-22 15:56): https://repository.tudelft.nl/islandora/search/%20?amp%3Bcollection=research&%3Bamp%3Bf%5B0%5D=mods_subject_topic_ss%3A%22picture%5C%20perception%22&%3Bamp%3Bsort=mods_originInfo_dateSort_dt%20asc&f%5B0%5D=mods_name_personal_author_namePart_family_ss%3A%22Yang%22&f%5B1%5D=mods_name_personal_author_namePart_family_ss%3A%22Zhang%22&f%5B2%5D=mods_subject_topic_ss%3A%22ALGaN%5C/GaN%22