Tang, Zhuorui (author), Gu, Lin (author), Jin, Lei (author), Dai, Kefeng (author), Mao, Chaobin (author), Wu, Sanzhong (author), Zhang, Rongwei (author), Yang, Jinsong (author), Zhang, Kouchi (author) In this work, 4H-SiC homoepitaxial layers were grown on 4°off-axis substrates at different susceptor rotation speeds by using a hot-wall horizontal CVD reactor. The effect of different susceptor rotation speed on the quality of 4H-SiC epitaxial layers in terms of thickness, thickness uniformity, crystallinity, surface morphology and...
journal article 2024