-
document
-
Zhang, Jian (author), Sokolovskij, R. (author), Chen, Ganhui (author), Zhu, Yumeng (author), Qi, Yongle (author), Lin, Xinpeng (author), Li, Wenmao (author), Zhang, G. (author), Jiang, Yu-Long (author), Yu, Hongyu (author)
In this paper, a method to extend the detection range of hydrogen sulfide (H<sub>2</sub>S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H<sub>2</sub>S exposure in dry air. A pre...
journal article 2019
Source URL (retrieved on 2024-05-21 21:13): https://repository.tudelft.nl/islandora/search/%20?collection=research&%3Bamp%3Bf%5B0%5D=mods_genre_s%3A%22doctoral%5C%20thesis%22&%3Bamp%3Bf%5B1%5D=mods_subject_topic_ss%3A%22architecture%22&%3Bamp%3Bf%5B2%5D=mods_subject_topic_ss%3A%22HLS%22&%3Bamp%3Bf%5B3%5D=RELS_EXT_isMemberOfCollection_uri_s%3A%22info%5C%3Afedora%5C/collection%5C%3Air%22&%3Bf%5B0%5D=mods_subject_topic_ss%3A%22modelling%22&f%5B0%5D=mods_name_personal_author_namePart_family_ss%3A%22Zhang%22&f%5B1%5D=mods_subject_topic_ss%3A%22AlGaN%5C/GaN%22&f%5B2%5D=mods_name_personal_author_namePart_family_ss%3A%22Jiang%22&sort=mods_genre_s%20asc