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document
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Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author) journal article 2001
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document
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Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author) journal article 2001
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document
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Mertes, K.M. (author), Zheng, H. (author), Vitkalov, S.A. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author) journal article 2001
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document
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Vitkalov, S.A. (author), Zheng, H. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author)
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value.
journal article 2000
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document
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Vitkalov, S.A. (author), Zheng, H. (author), Mertes, K.M. (author), Sarachik, M.P. (author), Klapwijk, T.M. (author) journal article 2000
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