-
document
-
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015
-
document
-
Mandai, S. (author), Fishburn, M.W. (author), Maruyama, Y. (author), Charbon, E. (author)
We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at...
journal article 2012
Source URL (retrieved on 2024-06-01 15:47): https://repository.tudelft.nl/islandora/search/%2520?amp%253Bf%255B0%255D=mods_name_personal_author_namePart_family_ss%253A%2522Doorn%2522&%253Bf%255B1%255D=mods_subject_topic_ss%253A%2522Water%255C%2520governance%2522&%253Bf%255B2%255D=mods_subject_topic_ss%253A%2522Environmental%255C%2520risks%2522&%253Bsort=mods_originInfo_dateSort_dt%2520asc&collection=research&f%255B0%255D=mods_name_personal_author_namePart_family_ss%253A%2522Visser%2522&f%5B0%5D=mods_subject_topic_ss%3A%22silicon%22&f%5B1%5D=mods_subject_topic_ss%3A%22avalanche%5C%20photodiodes%5C%20%5C%28APDs%5C%29%22