-
document
-
Lee, M.J. (author), Sun, P. (author), Charbon, E. (author)
This paper reports on the first implementation of a single-photon avalanche diode (SPAD) in standard silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The SPAD is realized in a circular shape, and it is based on a P+/N-well junction along with a P-well guard-ring structure formed by lateral diffusion of two...
journal article 2015
-
document
-
Lee, M.J. (author), Youn, J.S. (author), Park, K.Y. (author), Choi, W.Y. (author)
We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger...
journal article 2014
Source URL (retrieved on 2024-05-21 21:19): https://repository.tudelft.nl/islandora/search/collection%253Air?collection=research&%3Bamp%3Bf%5B0%5D=mods_genre_s%3A%22doctoral%5C%20thesis%22&%3Bamp%3Bf%5B1%5D=mods_name_personal_author_namePart_family_ss%3A%22Li%22&%3Bamp%3Bf%5B2%5D=mods_subject_topic_ss%3A%22Discontinuous%5C%20Galerkin%5C%20method%22&%3Bf%5B0%5D=mods_subject_topic_ss%3A%22sediment%5C%20transport%22&f%5B0%5D=mods_subject_topic_ss%3A%22silicon%22&f%5B1%5D=mods_subject_topic_ss%3A%22photodetectors%22