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Wank, M.A. (author), Van Swaaij, R.A.C.M.M. (author), Kudlacek, P. (author), Van de Sanden, M.C.M. (author), Zeman, M. (author)
We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding field energy analyzer demonstrate the achieved control over the ion energy distribution for...
journal article 2010
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Pieters, B.E. (author), Stiebig, H. (author), Zeman, M. (author), Van Swaaij, R.A.C.M.M. (author)
Microcrystalline silicon (?c-Si:H) is a promising material for application in multijunction thin-film solar cells. A detailed analysis of the optoelectronic properties is impeded by its complex microstructural properties. In this work we will focus on determining the mobility gap of ?c-Si:H material. Commonly a value of 1.1?eV is found, similar...
journal article 2009
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Klaver, A. (author), Nádady, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)
We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...
journal article 2006
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Khan, R.U.A. (author), Silva, S.R.P. (author), Van Swaaij, R.A.C.M.M. (author)
Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in...
journal article 2003
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