-
document
-
Klaver, A. (author), Nádady, V. (author), Zeman, M. (author), Swaaiij, R.A.C.M.M. (author)
We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the defect-state density increased. A similar...
journal article 2006
Source URL (retrieved on 2024-05-22 03:53): https://repository.tudelft.nl/islandora/search/department%3A%22Electrical%255C%252BSustainable%255C%252BEnergy%22?collection=research&%3Bf%5B0%5D=mods_name_personal_author_namePart_family_ss%3A%22Isabella%22&%3Bf%5B1%5D=mods_genre_s%3A%22journal%5C%20article%22&%3Bf%5B2%5D=mods_subject_topic_ss%3A%22elemental%5C%20semiconductors%22&f%5B0%5D=mods_subject_topic_ss%3A%22amorphous%5C%20semiconductors%22&f%5B1%5D=mods_subject_topic_ss%3A%22hydrogen%2C%22