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document
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Buizert, C. (author), Koppens, F.H.L. (author), Pioro-Ladriere, M. (author), Tranitz, H.P. (author), Vink, I.T. (author), Tarucha, S. (author), Wegscheider, W. (author), Vandersypen, L.M.K. (author)
We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs=AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor...
journal article 2008
Source URL (retrieved on 2024-05-30 05:25): https://repository.tudelft.nl/islandora/search/department%3A%22Kavli%255C%20Institute%255C%20of%255C%20Nanoscience%255C%20Delft%22?collection=research&f%5B0%5D=mods_name_personal_author_namePart_family_ss%3A%22Koppens%22&f%5B1%5D=mods_genre_s%3A%22journal%5C%20article%22