Electron-beam-induced deposition of platinum at low landing energies

Journal article (2008)

Authors

A. Botman

D.A.M. De Winter

J.J.L. Mulders

Department

IST/Imaging Science and Technology () (TU Delft)

Platinum Silicon dioxide Electron beam deposition Methylcyclopentadienyl-platinum-trimethyl CAS 94442-22-5

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Published Date

01-12-2008

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Source:

Journal of Vacuum Science & Technology B, 26 (6), 2008

ISSN:

1071-1023

Faculty

Applied Sciences

Department

IST/Imaging Science and Technology

Abstract

Electron-beam-induced deposition of platinum from methylcyclopentadienyl-platinum-trimethyl was performed with a focused electron beam at low landing energies, down to 10?eV. The deposition growth rate is maximal at 140?eV, with the process being over ten times more efficient than at 20?kV. No significant dependence of composition with landing energy was found in the deposits performed at energies between 40 and 1000?eV. This study provides further evidence for the dissociation process being primarily driven by the sub-20-eV secondary electrons.

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