Proximity effect model for x-ray transition edge sensors

Conference Paper (2018)
Author(s)

R. C. Harwin (University of Cambridge)

D. J. Goldie (University of Cambridge)

S. Withington (University of Cambridge)

P. Khosropanah (SRON–Netherlands Institute for Space Research)

L. Gottardi (SRON–Netherlands Institute for Space Research)

J. R. Gao (Kavli institute of nanoscience Delft, TU Delft - QN/Gao Lab, SRON–Netherlands Institute for Space Research)

Research Group
QN/Gao Lab
DOI related publication
https://doi.org/10.1117/12.2313359
More Info
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Publication Year
2018
Language
English
Research Group
QN/Gao Lab
Volume number
10709
ISBN (print)
9781510619715

Abstract

Transition Edge Sensors are ultra-sensitive superconducting detectors with applications in many areas of research, including astrophysics. The device consists of a superconducting thin film, often with additional normal metal features, held close to its transition temperature and connected to two superconducting leads of a higher transition temperature. There is currently no way to reliably assess the performance of a particular device geometry or material composition without making and testing the device. We have developed a proximity effect model based on the Usadel equations to predict the effects of device geometry and material composition on sensor performance. The model is successful in reproducing I - V curves for two devices currently under study. We use the model to suggest the optimal size and geometry for TESs, considering how small the devices can be made before their performance is compromised. In the future, device modelling prior to manufacture will reduce the need for time-consuming and expensive testing.

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