Synthesis of Al4SiC4 powders via carbothermic reduction

Reaction and grain growth mechanisms

Journal Article (2017)
Author(s)

Xinming Xing (University of Science and Technology Beijing)

Junhong Chen (University of Science and Technology Beijing)

Guoping Bei (TU Delft - (OLD) MSE-1)

Bin Li (University of Science and Technology Beijing)

Kuo Chih Chou (University of Science and Technology Beijing)

Xinmei Hou (University of Science and Technology Beijing)

Research Group
(OLD) MSE-1
Copyright
© 2017 Xinming Xing, Junhong Chen, G. Bei, Bin Li, Kuo Chih Chou, Xinmei Hou
DOI related publication
https://doi.org/10.1007/s40145-017-0247-z
More Info
expand_more
Publication Year
2017
Language
English
Copyright
© 2017 Xinming Xing, Junhong Chen, G. Bei, Bin Li, Kuo Chih Chou, Xinmei Hou
Research Group
(OLD) MSE-1
Issue number
4
Volume number
6
Pages (from-to)
351-359
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

Highly pure Al4SiC4 powders were prepared by carbothermic reduction at 2173 K using Al2O3, SiO2, and graphite as raw materials. The obtained Al4SiC4 powders owned hexagonal plate-like grains with a diameter of about 200–300 μm and a thickness of about 2–6 μm. Based on the experimental results, the reaction of Al4SiC4 formation and grain evolution mechanisms were determined from thermodynamic and first-principles calculations. The results indicated that the synthesis of Al4SiC4 by the carbothermic reduction consisted of two parts, i.e., solid–solid reactions initially followed by complex gas–solid and gas–gas reactions. The grain growth mechanism of Al4SiC4 featured a two-dimensional nucleation and growth mechanism. The gas phases formed during the sintering process favored the preferential grain growth of (0010) and (1 ī0) planes resulting in formation of hexagonal plate-like Al4SiC4 grains.