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Single-Electron Spin Qubits in Silicon for Quantum Computing

Review (2025)
Author(s)

Guangchong Hu (Hefei National Laboratory, International Quantum Academy)

Wei Wister Huang (National University of Singapore)

Ranran Cai (University of Science and Technology of China)

Lin Wang (Universität Konstanz)

Chih Hwan Yang (University of New South Wales)

Gang Cao (Hefei National Laboratory, University of Science and Technology of China)

Xiao Xue (Hefei National Laboratory, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, International Quantum Academy, Kavli institute of nanoscience Delft)

Peihao Huang (Hefei National Laboratory, International Quantum Academy)

Yu He (Hefei National Laboratory, International Quantum Academy)

Research Group
QCD/Vandersypen Lab
DOI related publication
https://doi.org/10.34133/icomputing.0115
More Info
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Publication Year
2025
Language
English
Research Group
QCD/Vandersypen Lab
Volume number
4
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Abstract

The recent decade has witnessed substantial advancements in silicon quantum computing. Important milestones include demonstrations of quantum gates exceeding the fault-tolerance threshold, highfidelity single-shot spin readout, hot quantum bits (hot qubits), and compact scalable spin arrays. Silicon qubits hold promise to leverage semiconductor industry technologies into scalable qubit manufacturing. Both the academic and industry communities are striving to push this advantage into reality. However, formidable challenges persist in the quest to develop a fully operational universal quantum computer. This review focuses on single-spin qubits in silicon. First, we start with foundational spin qubit theory. Then, we discuss gate-defined quantum dots and donor dot systems, with a particular emphasis on two-qubit gate operations and the scalability of qubit arrays. Lastly, we address long-distance coupling, highlighting key areas for future research and potential scale-up strategies for this rapidly evolving field.