Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages
Zhen Cui (Chongqing University, TU Delft - Electronic Components, Technology and Materials)
Xianping Chen (Student TU Delft)
Xuejun Fan (Lamar University)
Guoqi Zhang (Chongqing University)
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Abstract
Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In this system, the Cu and SiO2 are bonded together by three types of chemical bonds, Cu-OO, Cu-O, and Cu-Si, which cause three atomistic interfacial structures. For Cu-O and Cu-Si bonded interfaces, the fracture occurs exactly at the interface, however, the fracture for Cu-OO bonded interface occurs at copper layer near the interface, which indicate two different fracture criterions coexist in Cu/SiO2 system. And, the calculated interfacial strength at macroscale is in agreement with available experimental results.