Small Angle Shubnikov-de Haas Measurements in Silicon MOSFET's

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Source:

e-print of Condensed Matter 0004210 (April 2000)

Faculty

Applied Sciences

Abstract

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin polarization above H_{sat}, the parallel field above which the resistivity saturates to a constant value.

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