Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions
Chenyang Yang (Chinese Academy of Sciences, University of Chinese Academy of Science)
Jianwen Sun (Tsinghua University)
Yulong Zhang (Tsinghua University)
Jingya Tang (Chinese Academy of Sciences, University of Chinese Academy of Science)
Zizheng Liu (Chinese Academy of Sciences)
Teng Zhan (Chinese Academy of Sciences)
Dian-Bing Wang (Chinese Academy of Sciences)
Guoqi Zhang (TU Delft - Electronic Components, Technology and Materials)
Zewen Liu (Tsinghua University)
Xian-En Zhang (Shenzhen institute of Advances Technology, University of Chinese Academy of Science, Chinese Academy of Sciences)
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Abstract
The COVID-19 pandemic has highlighted the need for rapid and sensitive detection of SARS-CoV-2. Here, we report an ultrasensitive SARS-CoV-2 immunosensor by integration of an AlGaN/GaN high-electron-mobility transistor (HEMT) and anti-SARS-CoV-2 spike protein antibody. The AlGaN/GaN HEMT immunosensor has demonstrated the capability to detect SARS-CoV-2 spike proteins at an impressively low concentration of 10−22 M. The sensor was also applied to pseudoviruses and SARS-CoV-2 ΔN virions that display the Spike proteins with a single virion particle sensitivity. These features validate the potential of AlGaN/GaN HEMT biosensors for point of care tests targeting SARS-CoV-2. This research not only provides the first HEMT biosensing platform for ultrasensitive and label-free detection of SARS-CoV-2.