Thermal annealing of C ion irradiation defects in nuclear graphite studied by positron annihilation
C. Q. Shi (Tsinghua University)
H. Schut (TU Delft - RST/Neutron and Positron Methods in Materials)
Z. C. Li (Tsinghua University)
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Abstract
In order to investigate the thermal behaviour of radiation induced point defects in nuclear graphite, ETU10 graphite was implanted with 350 keV C+ ion to doses of 1015 and 1016 cm-2. The point defects introduced by the implantation were characterized by Positron Annihilation Doppler Broadening (PADB) and their thermal behaviour was studied during "in situ" annealing at Delft Variable Energy Positron beam (VEP). The annealing was performed for 5 minutes at temperatures ranging from 300 K (as implanted) to 1500 K in steps of 100 K. For both doses, an annealing stage at around 450 K is observed followed by a second stage around 700 K. For the high dose implantation vacancy complexes are found which are stable up to a temperature around 1400K.
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