Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

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Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

Conference Paper (2018)

Author(s)

Mike Ah Sen (ECN Solar Energy)

Pierpaolo Spinelli (ECN Solar Energy)

Benjamin Kikkert (ECN Solar Energy)

Eelko Hoek (ECN Solar Energy)

Bart Macco (Eindhoven University of Technology)

Arthur Weeber (TU Delft - Photovoltaic Materials and Devices, ECN Solar Energy)

Paula Bronsveld (ECN Solar Energy)

Research Group

Photovoltaic Materials and Devices

DOI related publication

https://doi.org/10.1063/1.5049264 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:2209f26f-539a-40b3-8f95-17a0049d385e

More Info

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Publication Year

2018

Language

English

Research Group

Photovoltaic Materials and Devices

Volume number

1999

Article number

040001

ISBN (print)

978-0-7354-1715-1

Event

SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics (2018-03-19 - 2018-03-21), Lausanne, Switzerland

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Abstract

Electron beam (E-beam) deposited molybdenum oxide (MoO_x) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoO_x/c-Si junction based device, reaching an average implied V_oc (iV_oc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoO_x as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoO_x-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoO_x and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoO_x deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.