Electron beam evaporated molybdenum oxide as hole-selective contact in 6-inch c-Si heterojunction solar cells

Conference paper (2018)

Authors

M.T.S.K. Ah Sen ECN Solar Energy
P Spinelli ECN Solar Energy
Benjamin W.J. Kikkert ECN Solar Energy
Eelko G. Hoek ECN Solar Energy
Bart Macco Eindhoven University of Technology
A.W. Weeber Photovoltaic Materials and Devices - EEMCS , ECN Solar Energy
Paula Bronsveld ECN Solar Energy
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
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Published Date

2018

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Electron beam (E-beam) deposited molybdenum oxide (MoOx) has been investigated for its potential to replace p-type hydrogenated amorphous silicon (a-Si:H) in Si heterojunction (SHJ) solar cells. Excellent passivation was achieved for our best MoOx/c-Si junction based device, reaching an average implied Voc (iVoc) of 734 mV on textured, commercially available 6-inch Cz wafers. This confirms the compatibility of MoOx as a hole selective layer with industrial SHJ cell processing. A hole barrier was, however, observed for our MoOx-based solar cells due to inefficient hole extraction. The formation of this hole barrier can be related to annealing of MoOx and the presence of a native oxide grown on the intrinsic a-Si:H interface layer below. Pre-annealing, followed by an HF treatment on the a-Si:H(i) layer prior to MoOx deposition, proved to be useful to mitigate the formed barrier, while making it more stable under standard SHJ annealing conditions.

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