Scrutinizing electro-osmosis and surface conductivity with molecular dynamics

Journal Article (2017)
Author(s)

Bertrand Siboulet (Université de Montpellier)

Sarah Hocine (Université de Montpellier)

Remco Hartkamp (TU Delft - Process and Energy)

Jean François Dufrêche (Université de Montpellier)

Department
Process and Energy
DOI related publication
https://doi.org/10.1021/acs.jpcc.7b00309
More Info
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Publication Year
2017
Language
English
Department
Process and Energy
Issue number
12
Volume number
121
Pages (from-to)
6756-6769

Abstract

We present a simulation and modeling study of electro-osmotic flow of an aqueous cesium chloride solution confined in a charged amorphous silica slot. Contrasting traditional models of the electric double layer, molecular dynamics simulations indicate that there is no stagnant layer, no Stern layer conduction, and no outer Helmholtz layer. The description of the interface requires two considerations. First, a distinction has to be made between free and surface-bonded ions. The latter do not form a physical layer but rather a set of ion-surface contact pairs. Second, the mobility of the free ions is reduced relative to their bulk value. This hydrodynamic effect needs to be included. These two concepts, coupled to simple macroscopic equations, are sufficient to describe surface conductivity and electro-osmotic flow in the frame of classical mean-field treatment. We show that surface conduction is negative at high concentration, and the Bikerman formula is only valid at low concentration.

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