Optical micro-machined ultrasound sensors with a silicon photonic resonator in a buckled acoustical membrane

Conference Paper (2019)
Author(s)

W. J. Westerveld (TU Delft - QID/Hanson Lab, IMEC-Solliance)

S. M. Leinders (ImPhys/Acoustical Wavefield Imaging )

P. L.M.J. Van Neer (ImPhys/Acoustical Wavefield Imaging , TNO)

H. P. Urbach (TU Delft - ImPhys/Optics)

N. De Jong (ImPhys/Acoustical Wavefield Imaging )

M. D. Verweij (ImPhys/Acoustical Wavefield Imaging )

X. Rottenberg (IMEC-Solliance)

V. Rochus (IMEC-Solliance)

ImPhys/Acoustical Wavefield Imaging
DOI related publication
https://doi.org/10.1109/EuroSimE.2019.8724528
More Info
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Publication Year
2019
Language
English
ImPhys/Acoustical Wavefield Imaging
Article number
8724528
ISBN (electronic)
978-1-5386-8040-7
Event
20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 (2019-03-24 - 2019-03-27), Hannover, Germany
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Abstract

Future applications of ultrasonography in (bio-)medical imaging require ultrasound sensor matrices with small sensitive elements. Promising are opto-mechanical ultrasound sensors (OMUS) based on a silicon photonic ring resonator embedded in a silicon-dioxide acoustical membrane. This work presents new OMUS modelling: acousto-mechanical non-linear FEM and photonic circuit equations. We show that initial wafer stress needs to be considered in the design: the acoustical resonance frequency changes considerably and OMUS sensitivity differs for up-or downwards buckled membranes. Simulated acoustical resonance frequency agrees well with measurements, assuming realistic SOI wafer stress. Measured sensitivity showed large device-to-device variation and simulations agree within this order of magnitude. We conclude that careful modeling of stress is necessary (b) for the design of robust and sensitive sensors.

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