Stimulated terahertz emission due to electronic Raman scattering in silicon

Journal article (2009)
Department
Kavli Institute of Nanoscience (AS) (TU Delft)
Copyright: © 2009 The Author(s); American Institute of Physics
DOI: https://doi.org/doi:10.1063/1.3119662
Silicon Optical pumping Elemental semiconductors Impurity states Raman lasers Semiconductor lasers Submillimetre wave lasers
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Published Date

30-04-2009

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Source:

Applied Physics Letters, 94 (17), 2009

ISSN:

0003-6951

ISBN:

0003-6951

Source:

http://link.aip.org/link/APPLAB/v94/i17/p171112/s1

Faculty

Applied Sciences

Department

Kavli Institute of Nanoscience

Abstract

Stimulated Raman emission in the terahertz frequency range (4.8–5.1 THz and 5.9–6.5 THz) has been realized by optical excitation of arsenic donor centers in silicon at low temperatures. The Stokes shift of the observed laser emission is 5.42 THz which is equal to the Raman-active donor electronic transition between the ground 1s(A1) and the excited 1s(E) arsenic states. Optical thresholds of the Raman laser are similar to those observed for other silicon donor lasers. In addition, intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A1)?2s transition.

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