The influence of strain relaxation on the electrical properties of Si/SiGe resonant tunneling diodes.
Journal Article
(2000)
Author(s)
WP Lukey (External organisation)
J Caro (TU Delft - QN/Fysics of NanoElectronics)
T Zijlstra (TU Delft - QN/Kavli Nanolab Delft)
EWJM van der Drift (TU Delft - QN/Kavli Nanolab Delft)
S Radelaar (TU Delft - OLD Metals Processing, Microstructures and Properties)
Research Group
QN/Fysics of NanoElectronics
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https://resolver.tudelft.nl/uuid:2fe77b96-3dc8-48d9-bdb4-1fa254461b9d
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Publication Year
2000
Research Group
QN/Fysics of NanoElectronics
Issue number
1
Volume number
24
Pages (from-to)
27-35
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