Single, double, and triple quantum dots in Ge/Si nanowires

Journal article (2018)

Authors

F. N.M. Froning University of Basel
M. K. Rehmann University of Basel
Joost Ridderbos University of Twente
Matthias Brauns University of Twente
F. A. Zwanenburg University of Twente
A. Li Eindhoven University of Technology
E.P.A.M. Bakkers QN/Bakkers Lab , Eindhoven University of Technology
D. Zumbühl University of Basel
Research Group
QN/Bakkers Lab
Copyright: © 2018 F. N.M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E.P.A.M. Bakkers, D. M. Zumbühl, F. R. Braakman
DOI
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https://doi.org/10.1063/1.5042501
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Published Date

2018-8

Language

English

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Research Group

QN/Bakkers Lab

Abstract

We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.

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