Single, double, and triple quantum dots in Ge/Si nanowires

None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None; None, None

Single, double, and triple quantum dots in Ge/Si nanowires

Journal Article (2018)

Author(s)

F. N.M. Froning (University of Basel)

M. K. Rehmann (University of Basel)

J. Ridderbos (University of Twente)

M. Brauns (University of Twente)

F. A. Zwanenburg (University of Twente)

A. Li (Eindhoven University of Technology)

E. P.A.M. Bakkers (TU Delft - QN/Bakkers Lab, Eindhoven University of Technology)

D. M. Zumbühl (University of Basel)

F. R. Braakman

Research Group

QN/Bakkers Lab

DOI related publication

https://doi.org/10.1063/1.5042501 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:37318757-8cce-4de0-9025-3adedd26c492

More Info

expand_more

Publication Year

2018

Language

English

Research Group

QN/Bakkers Lab

Issue number

7

Volume number

113

Article number

073102

Downloads counter

161

Collections

Institutional Repository

Abstract

We report highly tunable control of holes in Ge/Si core/shell nanowires. We demonstrate the ability to create single quantum dots of various sizes, with low hole occupation numbers and clearly observable excited states. For the smallest dot size, we observe indications of single-hole occupation. Moreover, we create double and triple tunnel-coupled quantum dot arrays. In the double quantum dot configuration, we observe Pauli spin blockade. These results open the way to perform hole spin qubit experiments in these devices.