Integrated circuits based on conjugated polymer monolayer
Mengmeng Li (Eindhoven University of Technology, Max Planck Institute for Polymer Research)
Deepthi Kamath Mangalore (Max Planck Institute for Polymer Research)
Jingbo Zhao (The Hong Kong University of Science and Technology)
Joshua H. Carpenter (University of North Carolina)
Hongping Yan (Stanford Synchrotron Laboratory)
Harald Ade (University of North Carolina)
Klaus Müllen (Max Planck Institute for Polymer Research)
Paul W.M. Blom (Max Planck Institute for Polymer Research)
Wojciech Pisula (Max Planck Institute for Polymer Research, Lodz University of Technology)
Dago M. De Leeuw (TU Delft - Novel Aerospace Materials)
Kamal Asadi (Max Planck Institute for Polymer Research)
He Yan (The Hong Kong University of Science and Technology)
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Abstract
It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V-1 s-1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.