A high frequency 110kV output-voltage, 8kW output-power high voltage generator with silicon carbide power semiconductor devices

Abstract

A novel modular high frequency high voltage (HV) generator with silicon carbide (SiC) power semiconductor devices is proposed in this paper to achieve high efficiency, sharp HV pulse and compact size. The modular architecture is introduced for high frequency operation firstly. The switching characteristics and detailed design consideration on the gate driver circuit are given. Finally, the 8kW output-power, 110kV output-voltage HV generator prototype with 300 kHz500 kHz switching frequency is built to validate the design. Compared with existing design, 2 times high power density, around 10% higher efficiency and 4 times faster HV pulse can be achieved from the proposed modular SiC HV generators.