All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy

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All-SIC surface micromachined nanoreactor for in-situ transmission electron microscopy

Conference Paper (2016)

Author(s)

Bruno Morana (TU Delft - EKL-Users)

Cinzia Silvestri (TU Delft - Tera-Hertz Sensing)

Fredrik Creemer (TU Delft - EEMS - General)

Lina Sarro (TU Delft - Electronic Components, Technology and Materials)

Resistance Fabrication Silicon carbide Loading Etching Microchannels Perfomance evaluation

DOI related publication

https://doi.org/10.1109/MEMSYS.2016.7421738 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:3bcf4c61-0f83-4e16-a936-ae3291d9f194

More Info

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Publication Year

2016

Language

English

Pages (from-to)

753-756

ISBN (print)

978-1-5090-1973-1

Event

Downloads counter

172

Abstract

We present a silicon carbide (SiC) based surface micromachined nanoreactor for in-situ characterization of reactions between solid nanostructured materials and gasses in transmission electron microscopes (TEMs). For the first time SiC is used as construction material for this device and a novel design of gas-microchannel with a two-level height is implemented. The use of SiC compared to the standard construction materials allows for easier and more reliable fabrication of the complete microsystem and for improved performance in terms of temperature. Additionally, the two-level height channel eases the loading of the specimens without affecting the sensitivity in the gas analysis.