An analytical turn-on power loss model for 650-V GaN eHEMTs

Conference paper (2018)

Authors

Yanfeng Shen Aalborg University
Huai Wang Aalborg University
Zhan Shen Aalborg University
Frede Blaabjerg Aalborg University
Z. Qin DC systems, Energy conversion & Storage - EEMCS
Research Group
DC systems, Energy conversion & Storage (EEMCS) (TU Delft)
GaN eHEMTs Turn-on Power loss model
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Published Date

2018

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

DC systems, Energy conversion & Storage

Abstract

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

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