An analytical turn-on power loss model for 650-V GaN eHEMTs

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An analytical turn-on power loss model for 650-V GaN eHEMTs

Conference Paper (2018)

Author(s)

Yanfeng Shen (Aalborg University)

Huai Wang (Aalborg University)

Zhan Shen (Aalborg University)

Frede Blaabjerg (Aalborg University)

Zian Qin (TU Delft - DC systems, Energy conversion & Storage)

GaN eHEMTs Turn-on Power loss model

DOI related publication

https://doi.org/10.1109/APEC.2018.8341123 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:468be05e-6339-4a22-ae03-e0bb431e756c

More Info

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Publication Year

2018

Language

English

Pages (from-to)

913-918

ISBN (electronic)

978-1-5386-1180-7

Event

Downloads counter

161

Abstract

This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.