Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

GP Lansbergen (TU Delft - QN/Fysics of NanoElectronics)

R Rahman (TU Delft - Data-Intensive Systems)

CJ Wellard (External organisation)

I Woo (External organisation)

J Caro (TU Delft - QN/Photronic Devices)

N Collaert (External organisation)

S Biesemans (External organisation)

G Klimeck (External organisation)

L.C.L Hollenberg (External organisation)

S. Rogge (TU Delft - QN/Photronic Devices)