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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Journal article (2008)

Authors

GP Lansbergen QN/Fysics of NanoElectronics
R Rahman Data-Intensive Systems
CJ Wellard External organisation
I Woo External organisation
Jacob Caro QN/Photronic Devices
N Collaert External organisation
S Biesemans External organisation
G Klimeck External organisation
L.C.L Hollenberg External organisation
S. Rogge QN/Photronic Devices
Research Group
QN/Fysics of NanoElectronics
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Published Date

2008

Language

Undefined/Unknown

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Research Group

QN/Fysics of NanoElectronics

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