Avoiding concentration quenching and self-absorption in Cs4EuX6 (X = Br, I) by Sm2+ doping

Journal Article (2023)
Author(s)

Casper van Aarle (TU Delft - RST/Luminescence Materials)

Karl W. Krämer (University of Bern)

P. Dorenbos (TU Delft - RST/Luminescence Materials)

Research Group
RST/Luminescence Materials
Copyright
© 2023 C. van Aarle, Karl W. Krämer, P. Dorenbos
DOI related publication
https://doi.org/10.1039/d2tc05311j
More Info
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Publication Year
2023
Language
English
Copyright
© 2023 C. van Aarle, Karl W. Krämer, P. Dorenbos
Research Group
RST/Luminescence Materials
Issue number
6
Volume number
11
Pages (from-to)
2336-2344
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Abstract

The benefits of doping Cs4EuBr6 and Cs4EuI6 with Sm2+ are studied for near-infrared scintillator applications. It is shown that undoped Cs4EuI6 suffers from a high probability of self-absorption, which is almost completely absent in Cs4EuI6:2% Sm. Sm2+ doping is also used to gain insight in the migration rate of Eu2+ excitations in Cs4EuBr6 and Cs4EuI6, which shows that concentration quenching is weak, but still significant in the undoped compounds. Both self-absorption and concentration quenching are linked to the spectral overlap of the Eu2+ excitation and emission spectra which were studied between 10 K and 300 K. The scintillation characteristics of Cs4EuI6:2% Sm is compared to that of the undoped samples. An improvement of energy resolution from 11% to 7.5% is found upon doping Cs4EuI6 with 2% Sm and the scintillation decay time shortens from 4.8 s to 3.5 s in samples of around 3 mm in size.