Overview of Wide/Ultra-Wide Bandgap Power Semiconductor Devices for Distributed Energy Resources
Sudip K. Mazumder (University of Illinois at Chicago)
Lars F. Voss (Lawrence Livermore National Laboratory)
Karen Dowling (TU Delft - Electronic Instrumentation)
Adam Conway (Raytheon Technologies)
David Hall (II-VI)
Robert J. Kaplar (Sandia National Laboratories)
Greg Pickrell (Sandia National Laboratories)
Jack Flicker (Sandia National Laboratories)
Andrew Binder (Sandia National Laboratories)
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Abstract
This article provides an overview of power semiconductor devices (PSDs) for the distributed energy resource (DER) system. To begin with, an overview of electrically triggered silicon carbide (SiC) and gallium nitride (GaN) devices followed by a brief narration of ultrawide bandgap (UWBG) PSDs and, subsequently, an overview of optically activated PSDs encompassing photoconductive semiconductor switch (PCSS) and optical bipolar PSDs are provided. Finally, an overview of PSD packaging and reliability is captured.