Formation of Si nanorods and hollow nano-structures using high precision plasma-treated nanosphere lithography

Journal Article (2014)
Author(s)

S. Soleimani-Amiri (University of Tehran)

Asghar Gholizadeh-Vayghan (University of Tehran)

Shima Rajabali (University of Tehran)

Z. Sanaee (University of Tehran)

Shams Mohajerzadeh (University of Tehran)

Affiliation
External organisation
DOI related publication
https://doi.org/10.1039/c4ra00796d
More Info
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Publication Year
2014
Language
English
Affiliation
External organisation
Issue number
25
Volume number
4
Pages (from-to)
12701-12709

Abstract

We report a novel method for the formation of hollow rod silicon nanostructures via plasma treated nanosphere lithography and reactive ion etching. The plasma treatment of polystyrene nanospheres (PS-NS) with O 2 and methanol-O2 gases is studied as a function of nanosphere size, plasma power and treatment time on a silicon substrate covered by a thin layer of nickel. Applying hydrogen or HCl plasma to already treated polystyrenes, nano-rings and nano-dots can be obtained without any physical or sputtering damage. Large area silicon nano-pillars and hollow silicon nano-structures with inner diameters of 50 nm were obtained by using optimized plasma treatment. These nanostructures show a hexagonal order with good fidelity to the PS-NS patterns. Various characterization techniques such as AFM, SEM, TEM, XPS and FTIR spectroscopy have been exploited to study the samples. The hollow rod structures made using this method will have applications in low power high performance electronic devices, optoelectronic and lithium ion battery devices. Also, a model for the formation of hollow rings is presented. This journal is

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