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Effect of pressure on nano copper sintering in interconnections of power device

Conference Paper (2019)
Author(s)

Jing Qian (Guilin University of Electronic Technology)

Xianping Chen (Guilin University of Electronic Technology, Chongqing University)

Chunjian Tan (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Xiandong Li (Chongqing University)

Qiumei Li (Guilin University of Electronic Technology)

Luqi Tao (Chongqing University)

Yiping Huang (Guilin University of Electronic Technology)

Lingmei Wu (Chongqing University)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ICEPT47577.2019.245788 Final published version
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Publication Year
2019
Language
English
Research Group
Electronic Components, Technology and Materials
Article number
9081038
ISBN (electronic)
9781728150642
Event
20th International Conference on Electronic Packaging Technology, ICEPT 2019 (2019-08-12 - 2019-08-15), Hong Kong, China
Downloads counter
148

Abstract

As the next-generation solder, nano-copper paste has attracted wide attention in the field of power electronics due to its outstanding properties. In this paper, the effect of pressure on nano-copper sintering is investigated. It is found that the electrode of chip cannot be contacted to the nano-copper layer when no pressure is applied, whereas during the sintering there are fewer defects on the surface of nano-copper compared with that of pre-sintering under certain pressure conditions. Besides, the results of metallographic microscope confirm that the sintering quality of nano-copper has a positive relationship with pressure.