Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Journal article (2003)

Authors

S Haffouz External organisation
A Grzegorczyk External organisation
PR Hageman External organisation
P Vennégues External organisation
EWJM van der Drift QN/Kavli Nanolab Delft
PK Larsen External organisation
Research Group
QN/Kavli Nanolab Delft
More Info
expand_more

Published Date

2003

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Research Group

QN/Kavli Nanolab Delft

No files available

Metadata only record. There are no files for this journal article.