Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/In<sub>x</sub>Ga<sub>1-x</sub>P Core-Shell Nanowires

Journal article (2016)

Authors

L Gagliano Eindhoven University of Technology
A. Belabbes Friedrich Schiller University Jena, King Abdullah University of Science and Technology
M Albani University of Milano-Bicocca
S Assali Eindhoven University of Technology
M. A. Verheijen Eindhoven University of Technology, Philips Innovation Services
L Miglio University of Milano-Bicocca
F. Bechstedt Friedrich Schiller University Jena
Jos E.M. Haverkort Eindhoven University of Technology
E.P.A.M. Bakkers Eindhoven University of Technology, QN/Bakkers Lab
Research Group
QN/Bakkers Lab
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Published Date

14-12-2016

Language

English

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Research Group

QN/Bakkers Lab

Abstract

Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InxGa1-xP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (δ8c-δ9v) to direct (δ7c-δ9v) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InxGa1-xP.