Luminescence tuning of Ce3+, Pr3+ activated (Y,Gd)AGG system by band gap engineering and energy transfer
Yiyi Ou (Sun Yat-sen University)
Weijie Zhou (Sun Yat-sen University)
Fengkai Ma (Sun Yat-sen University)
Chunmeng Liu (Sun Yat-sen University)
Rongfu Zhou (Sun Yat-sen University)
Fang Su (Sun Yat-sen University)
Yan Huang (Chinese Academy of Sciences)
Pieter Dorenbos (TU Delft - RST/Luminescence Materials)
Hongbin Liang (Sun Yat-sen University)
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Abstract
Tuning of phosphor luminescence properties, including the emission energy/intensity and thermal stability, is an important way to develop superior luminescent materials for diverse applications. In this work, we discuss the effect of band gap engineering and energy transfer on the luminescence properties of Ce3+ or Pr3+ doped (Y,Gd)AGG systems, and analyze the underlying reasons for their different phenomena. By using VUV-UV excitation spectra and constructing VRBE schemes, the changes of host band structure, 5d excited level energies and emission thermal stability of Ce3+ and Pr3+ with the incorporation of Gd3+ ions were studied. In addition, the energy transfer dynamics was also investigated in terms of the luminescence decay curves. This work demonstrates a way to tune phosphor luminescence properties by combining band gap engineering and energy transfer tailoring and provides an inspiring discussion on the different results of Gd3+ doping on the Ce3+ and Pr3+ emissions.
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