Strong modification of the reflection from birefringent layers of semiconductor nanowires by nanoshells

Diedenhofen, S.L.; Algra, R.E.; Bakkers, E.P.A.M.; Gómez Rivas, J.

doi:doi:10.1063/1.3662393

Strong modification of the reflection from birefringent layers of semiconductor nanowires by nanoshells

Journal article (2011)

Authors

S.L. Diedenhofen

R.E. Algra

E.P.A.M. Bakkers

J. Gómez Rivas

Department

QN/Quantum Nanoscience () (TU Delft)

DOI: https://doi.org/doi:10.1063/1.3662393

Nanowires Birefringence III-V semiconductors Silicon compounds Gallium compounds Refractive index

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Published Date

16-11-2011

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Source:

Applied Physics Letters, 99 (20), 2011

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Abstract

The propagation of light in layers of vertically aligned nanowires is determined by their unique and extreme optical properties. Depending on the nanowire filling fraction and their diameter, layers of nanowires form strongly birefringent media. This large birefringence gives rise to sharp angle dependent peaks in polarized reflection. We demonstrate experimentally the tunability of the reflection by adding shells of SiO2 with thicknesses ranging from 10?nm to 30?nm around the nanowires. The strong modification of the reflection peaks renders nanowire layers as a promising candidate for sensing applications.

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