Dynamics of direct X-ray detection processes in high-Z Bi2O3 nanoparticles-loaded PFO polymer-based diodes

Journal Article (2017)
Author(s)

A. Ciavatti (University of Bologna)

T. Cramer (University of Bologna)

M. Carroli (University of Bologna)

L. Basiricò (University of Bologna)

R. Fuhrer (Avantama AG)

D. M. De Leeuw (TU Delft - Novel Aerospace Materials)

B. Fraboni (University of Bologna)

Research Group
Novel Aerospace Materials
DOI related publication
https://doi.org/10.1063/1.4986345
More Info
expand_more
Publication Year
2017
Language
English
Research Group
Novel Aerospace Materials
Issue number
18
Volume number
111
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

Semiconducting polymer based X-ray detectors doped with high-Z nanoparticles hold the promise to combine mechanical flexibility and large-area processing with a high X-ray stopping power and sensitivity. Currently, a lack of understanding of how nanoparticle doping impacts the detector dynamics impedes the optimization of such detectors. Here, we study direct X-ray radiation detectors based on the semiconducting polymer poly(9,9-dioctyfluorene) blended with Bismuth(III)oxide (Bi2O3) nanoparticles (NPs). Pure polymer diodes show a high mobility of 1.3 × 10-5 cm2/V s, a low leakage current of 200 nA/cm2 at -80 V, and a high rectifying factor up to 3 × 105 that allow us to compare the X-ray response of a polymer detector in charge-injection conditions (forward bias) and in charge-collection conditions (reverse bias), together with the impact of NP-loading in the two operation regimes. When operated in reverse bias, the detectors reach the state of the art sensitivity of 24 μC/Gy cm2, providing a fast photoresponse. In forward operation, a slower detection dynamics but improved sensitivity (up to 450 ± 150 nC/Gy) due to conductive gain is observed. High-Z NP doping increases the X-ray absorption, but higher NP loadings lead to a strong reduction of charge-carrier injection and transport due to a strong impact on the semiconductor morphology. Finally, the time response of optimized detectors showed a cut-off frequency up to 200 Hz. Taking advantage of such a fast dynamic response, we demonstrate an X-ray based velocity tracking system.

Files

1.4986345.pdf
(pdf | 1.15 Mb)
- Embargo expired in 01-11-2018
License info not available