Influence of the Magnetic's parasitic capacitance in the switching of high-voltage cascode GaN HEMT

Conference paper (2019)

Authors

N. Galanos Student
J. Popovic DC systems, Energy conversion & Storage - EEMCS
Jan Abraham Ferreira ESE Programmes - EEMCS
M Gerber Aeronamic BV
Research Group
DC systems, Energy conversion & Storage (EEMCS) (TU Delft)
Cascode configuration Double-pulse tester (DPT) Gallium Nitride (GaN) high electron mobility transistor (HEMT) Parasitic capacitance
More Info
expand_more

Published Date

2019

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

DC systems, Energy conversion & Storage

Abstract

In this paper, the influence of the parasitic capacitance of a magnetic component (inductor or transformer) on the switching of 600V cascode GaN HEMT devices is investigated. An analytical switching model is used to analyse the influence and the results are verified by means of an experimental double pulse tester setup. Furthermore, the influence of replacing the diode of the switching cell with an active GaN HEMT switch is analysed in combination with the parasitic capacitance of the magnetic component.

Files

07736736.pdf
(.pdf | 0.782 Mb)