Influence of the Magnetic's parasitic capacitance in the switching of high-voltage cascode GaN HEMT

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Influence of the Magnetic's parasitic capacitance in the switching of high-voltage cascode GaN HEMT

Conference Paper (2019)

Author(s)

N. Galanos (Student TU Delft)

J. Popovic (TU Delft - DC systems, Energy conversion & Storage)

J. A. Ferreira (TU Delft - ESE Programmes)

M Gerber (Aeronamic BV)

Research Group

DC systems, Energy conversion & Storage

Cascode configuration Double-pulse tester (DPT) Gallium Nitride (GaN) high electron mobility transistor (HEMT) Parasitic capacitance

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https://resolver.tudelft.nl/uuid:702ddd15-2213-4112-8a98-da3476095b41

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Publication Year

2019

Language

English

Research Group

DC systems, Energy conversion & Storage

Volume number

148

ISBN (electronic)

9783800741717

Abstract

In this paper, the influence of the parasitic capacitance of a magnetic component (inductor or transformer) on the switching of 600V cascode GaN HEMT devices is investigated. An analytical switching model is used to analyse the influence and the results are verified by means of an experimental double pulse tester setup. Furthermore, the influence of replacing the diode of the switching cell with an active GaN HEMT switch is analysed in combination with the parasitic capacitance of the magnetic component.

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