Towards a general concentration quenching model of Bi3+ luminescence

Journal Article (2017)
Author(s)

Roy H.P. Awater (TU Delft - RST/Fundamental Aspects of Materials and Energy)

Pieter Dorenbos (TU Delft - RST/Fundamental Aspects of Materials and Energy)

Research Group
RST/Fundamental Aspects of Materials and Energy
DOI related publication
https://doi.org/10.1016/j.jlumin.2017.05.011
More Info
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Publication Year
2017
Language
English
Research Group
RST/Fundamental Aspects of Materials and Energy
Volume number
188
Pages (from-to)
487-489

Abstract

The vacuum referred binding energy of the electron in the Bi2+ ground state has been determined in 15 different compounds. This shows that the electron binding energy in the ground state of Bi2+ is at lower (more negative) energy compared to the electron binding energy in the excited state of Bi3+. This means that electron transfer from the excited state of one Bi3+ to a neighboring Bi3+, forming a Bi2+−Bi4+ pair, acts as a quenching route for the Bi3+ emission. Electron back transfer in the Bi2+−Bi4+ pair is then suggested to be the origin for the frequently observed pair emission. This paper shows that vacuum referred electron binding energy diagrams can provide a unique physical insight in the properties of inorganic compounds.

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