Towards a general concentration quenching model of Bi<sup>3+</sup> luminescence

Journal article (2017)

Authors

R.H.P. Awater RST/Fundamental Aspects of Materials and Energy - AS
P. Dorenbos RST/Fundamental Aspects of Materials and Energy - AS
Research Group
RST/Fundamental Aspects of Materials and Energy (AS) (TU Delft)
Bi3+ Bi2+ Quenching Charge transfer Bi-pairs
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Published Date

2017

Language

English

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Faculty

Applied Sciences

Department

RST/Radiation, Science and Technology

Research Group

RST/Fundamental Aspects of Materials and Energy

Abstract

The vacuum referred binding energy of the electron in the Bi2+ ground state has been determined in 15 different compounds. This shows that the electron binding energy in the ground state of Bi2+ is at lower (more negative) energy compared to the electron binding energy in the excited state of Bi3+. This means that electron transfer from the excited state of one Bi3+ to a neighboring Bi3+, forming a Bi2+−Bi4+ pair, acts as a quenching route for the Bi3+ emission. Electron back transfer in the Bi2+−Bi4+ pair is then suggested to be the origin for the frequently observed pair emission. This paper shows that vacuum referred electron binding energy diagrams can provide a unique physical insight in the properties of inorganic compounds.