Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Journal Article (2019)
Author(s)

C.A. Volk (University of Copenhagen, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)

Anasua Chatterjee (University of Copenhagen)

Fabio Ansaloni (University of Copenhagen)

Charles Marcus (University of Copenhagen)

Ferdinand Kuemmeth (University of Copenhagen)

Research Group
QCD/Vandersypen Lab
DOI related publication
https://doi.org/10.1021/acs.nanolett.9b02149
More Info
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Publication Year
2019
Language
English
Research Group
QCD/Vandersypen Lab
Issue number
8
Volume number
19
Pages (from-to)
5628-5633

Abstract

Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.

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