Thickness-Independent Capacitive Performance of Holey Ti3C2Tx Film Prepared through a Mild Oxidation Strategy
Rui Guo (TU Delft - RST/Storage of Electrochemical Energy, Shaanxi Normal University)
Peng Yuan (Shaanxi Normal University)
Xiying Han (Shaanxi Normal University)
Xuexia He (Shaanxi Normal University)
Jiangbo Lu (Shaanxi Normal University)
Qi Li (Shaanxi Normal University)
Liqin Dang (Shaanxi Normal University)
Jie Sun (Shaanxi Normal University)
Zonghuai Liu (Shaanxi Normal University)
Zhibin Lei (Shaanxi Normal University)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
The Ti3C2Tx film with metallic conductivity and high pseudo-capacitance holds profound promise in flexible high-rate supercapacitors. However, the restacking of Ti3C2Tx sheets hinders ion access to thick film electrodes. Herein, a mild yet green route has been developed to partially oxidize Ti3C2Tx to TiO2/Ti3C2Tx by introducing O2 molecules during refluxing the Ti3C2Tx suspension. The subsequent etching away of these TiO2 nanoparticles by HF leaves behind numerous in-plane nanopores on the Ti3C2Tx sheets. Electrochemical impedance spectroscopy shows that longer oxidation time of 40 min yields holey Ti3C2Tx (H-Ti3C2Tx) with a much shorter relax time constant of 0.85 s at electrode thickness of 25 µm, which is 89 times smaller than that of the pristineTi3C2Tx film (75.58 s). Meanwhile, H-Ti3C2Tx film with 25 min oxidation exhibits less-dependent capacitive performance in film thickness range of 10–84 µm (1.63–6.41 mg cm−2) and maintains around 60% capacitance as the current density increases from 1 to 50 A g−1. The findings clearly demonstrate that in-plane nanopores not only provide more electrochemically active sites, but also offer numerous pathways for rapid ion impregnation across the thick Ti3C2Tx film. The method reported herein would pave way for fabricating porous MXene materials toward high-rate flexible supercapacitor applications.