Position-controlled [100] InP nanowire arrays
J. Wang
S. Plissard
M. Hocevar
T.T.T. Vu
T. Zehender
G.G.W. Immink
M.A. Verheijen
J. Haverkort
E.P.A.M. Bakkers
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Abstract
We investigate the growth of vertically standing [100] zincblende InP nanowire (NW) arrays on InP (100) substrates in the vapor-liquid-solid growth mode using low-pressure metal-organic vapor-phase epitaxy. Precise positioning of these NWs is demonstrated by electron beam lithography. The vertical NW yield can be controlled by different parameters. A maximum yield of 56% is obtained and the tapering caused by lateral growth can be prevented by in situ HCl etching. Scanning electron microscopy, high-resolution transmission electron microscopy, and micro-photoluminescence have been used to investigate the NW properties.